Publication | Closed Access
Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing
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Citations
30
References
2019
Year
Post-deposition AnnealingElectrical EngineeringN-gan Mos CapacitorsEngineeringNanoelectronicsApplied PhysicsAluminum Gallium NitrideGan Power DeviceMicroelectronics
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