Polyimide-Based High-Temperature Plastic Electronics

Abstract

All-plastic transistor devices with thermal stability up to 220 °C are demonstrated. We employ polyimide substrates, polyimide dielectrics, and a polyimide-based semiconducting blend to achieve flexible and thermally-robust transistors. An in situ temperature-dependent charge transport study was used to demonstrate that these devices can operate in extremely high temperatures and can sustain prolonged baking. Our devices maintained stable charge-transport characteristics with charge mobilities of 0.20 cm2/(V s), ION/IOFF of 104, threshold voltage of 3 V, and operational voltage of 10 V when baked at 195 °C for 2 h.