Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

Infrared detectors: an overview

Antoni Rogalski · Infrared Physics & Technology · 2002 · 841 citations

Engineering, Electrical Engineering, Optoelectronics +16

Surface states at steam-grown silicon-silicon dioxide interfaces

C. N. Berglund · IEEE Transactions on Electron Devices · 1966 · 671 citations

Engineering, Electrical Engineering, Materials Science +17

Energy gap versus alloy composition and temperature in Hg1−<i>x</i>Cd<i>x</i>Te

Gary L. Hansen, J. L. Schmit, T. N. Casselman · Journal of Applied Physics · 1982 · 643 citations

Natural Sciences, Materials Engineering, Materials Science +15

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

Roman Engel‐Herbert, Yoontae Hwang, Susanne Stemmer · Journal of Applied Physics · 2010 · 413 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Calculation of intrinsic carrier concentration in Hg1−<i>x</i>CdxTe

Gary L. Hansen, J. L. Schmit · Journal of Applied Physics · 1983 · 220 citations

Engineering, Materials Engineering, Materials Science +17