Temperature‐dependent small signal performance of GaN‐on‐diamond HEMTs

Abstract

Abstract This paper presents the temperature dependence of small signal performance of GaN‐on‐diamond high electron mobility transistors (HEMTs) at an ambient temperature range from 0°C to 125°C. The temperature influence on the parasitic resistances together with the intrinsic parameters is investigated, and the temperature coefficients of these parameters are extracted from measured data. For comparison, a GaN‐on‐SiC device is also investigated. These results are important for the development and application of the GaN‐on‐diamond HEMT technology.