2019 · 19 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMixed-signal Integrated Circuit DesignRadio-frequency Integrated CircuitsBiasing TechniquesDividersI/q MixersMillimeter-wave Integrated CircuitsMixersRadio-frequency Integrated Circuit DesignTunable Power Dividers
A divide-by-2 frequency divider circuit was designed using 22-nm CMOS FD-SOI technology. The circuit utilizes back-gate biasing which provides almost 4GHz additional output center frequency tuning range over other mechanisms leading to 21.3 to 30GHz operation range with 0dBm input signal. This covers 5G bands from 24.25 to 27.5GHz with good margin. Divider dissipates 11mW from 0.86V supply and occupies 800μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of area. Small area allows to place divider-by-2 block next to IQ mixers in a direct conversion or sliding IF transmitter or receiver.
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Wideband mmWave CML static divider in 65nm SOI CMOS technology
Daeik D. Kim, Choongyeun Cho, Jonghae Kim et al. · 2008 · 17 citations