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Enhanced carrier transport over grain boundaries in lead-free CH<sub>3</sub>NH<sub>3</sub>Sn(I<sub>1−<i>x</i> </sub>Br<i> <sub>x</sub> </i>)<sub>3</sub> (0 ≤ <i>x</i> ≤ 1) perovskite solar cells
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Citations
42
References
2019
Year
This paper reports on grain boundary (GB) roles in lead-free tin halide perovskite thin films. Nano scale spatial mapping of charge separation efficiency in methylammonium tin halide (MASn(I<sub>1-x</sub> Br <sub>x</sub> )<sub>3</sub>, MA = CH<sub>3</sub>NH<sub>3</sub>) thin films were constructed by Kelvin probe force microscopy and conductive atomic force microscopy (C-AFM). We observed downward band bending at GBs under dark conditions and higher surface photovoltage along the GBs, confirmed by C-AFM which showed high local current flows along the GBs. The band bending degree and local current intensity were affected by the Br/I ratio. Photo-generated carriers were more effectively separated and collected at GBs with increased Br content, and hysteresis was observed in Br-rich Sn-halide perovskite.
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