Perovskite–fullerene hybrid materials suppress hysteresis in planar diodes

TLDR

Solution‑processed planar perovskite devices are desirable for optoelectronics but suffer from hysteresis and current instabilities. The hybrid material features PCBM homogeneously distributed at perovskite grain boundaries, passivating PbI₃⁻ antisite defects, promoting electron extraction, and exhibiting memristive behavior revealed by conductive AFM. The perovskite–PCBM hybrid demonstrates markedly reduced hysteresis and recombination loss, delivers low‑hysteresis planar solar cells with enhanced photovoltage, and is proposed to suppress anion migration by binding halide defects.

Abstract

Abstract Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI 3 − antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.