Advanced Functional Materials · 2019 · 118 citations · 33 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsOptical MaterialsSemiconductor MaterialsCrystal EngineeringLight-emitting DiodesNanostructured Electronic MaterialsPerovskite MaterialsQuantum ConfinementSemiconductor NanomaterialsCharge TransportCharge Transport MechanismsElectron-hole RecombinationHalide PerovskitesNanoscale Charge TransportOrganic-inorganic Hybrid PerovskitesPerovskite Light-emitting DiodesRadiative Recombination
Abstract Ruddlesden–Popper phase (RP‐phase) perovskites that consist of 2D perovskite slabs interleaved with bulky organic ammonium (OA) are favorable for light‐emitting diodes (LEDs). The critical limitation of LED applications is that the insulating OA arranged in a preferred orientation limits charge transport. Therefore, the ideal solution is to achieve a randomly connected structure that can improve charge transport without hampering the confinement of the electron–hole pair. Here, a structurally modulated RP‐phase metal halide perovskite (MHP), (PEA) 2 (CH 3 NH 3 ) m −1 Pb m Br 3 m +1 is introduced to make the randomly oriented RP‐phase unit and ensure good connection between them by applying modified nanocrystal pinning, which leads to an increase in the efficiency of perovskite LEDs (PeLEDs). The randomly connected RP‐phase MHP forces contact between inorganic layers and thereby yields efficient charge transport and radiative recombination. Combined with an optimal dimensionality, (PEA) 2 (CH 3 NH 3 ) 2 Pb 3 Br 10 , the structurally modulated RP‐phase MHP exhibits increased photoluminescence quantum efficiency, from 0.35% to 30.3%, and their PeLEDs show a 2,018 times higher current efficiency (20.18 cd A −1 ) than in the 2D PeLED (0.01 cd A −1 ) and 673 times than in the 3D PeLED (0.03 cd A −1 ) using the same film formation process. This approach provides insight on how to solve the limitation of RP‐phase MHP for efficient PeLEDs.
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Perovskite light-emitting diodes with external quantum efficiency exceeding 20 per cent
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