Recent progress in perovskite-based photodetectors: the design of materials and structures

Abstract

In recent years, taking advantages of high light absorption coefficients, long charge carrier diffusion lengths and intense photoluminescence, halide perovskites have attracted a great deal of interest in developing high-performance optoelectronic devices including solar cells, light-emitting diodes, photodetectors, transistors, lasers, and so on. Especially, the excellent combination of effective light absorption with tailorable absorption spectrum and high charge carrier mobility in a broadband range makes perovskite-based photodetectors different from traditional photodetectors made of inorganic semiconductors such as GaN, Si, and InGaAs. According to the recent reports, perovskites are promising to greatly improve responsivity, detectivity, noise equivalent power, linear dynamic range, and response speed of photodetectors. Here, we summarize the recent advancements in organic–inorganic hybrid perovskite-based photodetectors in terms of the progress in various low-dimension perovskites, and the recent effective approaches to enhance the performance of perovskite photodetector based on the interfacial engineering in perovskite heterostructures. Besides, two kinds of perovskite photodetectors, namely vertical structure and lateral structure, are analyzed, and the challenges to achieve practical applications in photodetectors are also discussed.