Read‐decoupled 8T1R non‐volatile SRAM with dual‐mode option and high restore yield

Abstract

This Letter proposes a read‐decoupled (RD) and average 8T1R non‐volatile static RAM (SRAM), RD‐8T1R. It uses only one memristor to achieve store energy reduction and higher restore yield compared with other two memristors based non‐volatile SRAMs. In addition, this structure can offer two alternative SRAM modes unlike previously known non‐volatile SRAMs, i.e. a high speed and a stable mode. Compared with existing technologies, the simulation results in TSMC‐65 nm show that the proposed scheme provides a remarkable restore yield. There are 154% improvement in the read static noise margin (@typical–typical (@TT) corner and stable mode) and 23% improvement in the read delay (@TT corner and high speed mode) compared with the previous 6T/7T/8 T non‐volatile SRAMs.