Voltage-Controlled Spintronic Stochastic Neuron Based on a Magnetic Tunnel Junction

Abstract

Neuromorphic computing based on stochastic spintronic units has attracted intense attention, but controlling such a stochastic system with high energy efficiency remains a challenge. The authors propose a voltage-controlled spintronic device that enables low-energy neuromorphic computing, with the stochastic behavior of the device being managed by an applied electric field via voltage-controlled magnetic anisotropy. These results will advance the quest to create energy-efficient spintronic systems for brainlike cognitive computing.