IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2019 · 45 citations · 15 references
EngineeringComputer ScienceElectrical EngineeringMachine LearningMicroelectronicsSemiconductor DevicesAccelerator ArchitectureCmos Circuit DesignHardware AccelerationMemory DevicesNeural NetworksSubthreshold Circuit DesignAccelerator MicroarchitectureAcceleratorsEnergy-efficient Digital CircuitsFloating-gate MemoryMemory Circuit DesignNeuromorphic HardwarePower-efficient Accelerator DesignSubthreshold Memory Circuits
Floating-gate silicon-oxygen-nitrogen-oxygen-silicon (SONOS) transistors can be used to train neural networks to ideal accuracies that match those of floating-point digital weights on the MNIST handwritten digit data set when using multiple devices to represent a weight or within 1% of ideal accuracy when using a single device. This is enabled by operating devices in the subthreshold regime, where they exhibit symmetric write nonlinearities. A neural training accelerator core based on SONOS with a single device per weight would increase energy efficiency by 120×, operate 2.1× faster, and require 5× lower area than an optimized SRAM-based ASIC.
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Geoffrey W. Burr, R. M. Shelby, Severin Sidler et al. · IEEE Transactions on Electron Devices · 2015 · 923 citations · Full text
Li‐Ion Synaptic Transistor for Low Power Analog Computing
Elliot J. Fuller, Farid El Gabaly, François Léonard et al. · Advanced Materials · 2016 · 587 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +16
Resistive memory device requirements for a neural algorithm accelerator
Sapan Agarwal, Steven J. Plimpton, David Russell Hughart et al. · 2016 · 203 citations · Full text