Defect dynamics in the resistive switching characteristics of Y0.95Sr0.05MnO3 films induced by electronic excitations

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

Feng Pan, Shuang Gao, Chen Chen et al. · Materials Science and Engineering R Reports · 2014 · 1.4K citations

Engineering, Materials Science, Physics +14

Emerging memories: resistive switching mechanisms and current status

Doo Seok Jeong, Reji Thomas, Ram S. Katiyar et al. · Reports on Progress in Physics · 2012 · 1.1K citations

Natural Sciences, Materials Engineering, Materials Science +17

Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interface

Akihito Sawa, Toshihiro Fujii, M. Kawasaki et al. · Applied Physics Letters · 2004 · 750 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

Suhas Kumar, John Paul Strachan, R. Stanley Williams · Nature · 2017 · 621 citations

Engineering, Electrical Engineering, Materials Science +16

Who Wins the Nonvolatile Memory Race?

G. I. Meijer · Science · 2008 · 529 citations

Computing, Computer Science, Computer Systems +6