Study of CuO Nanowire Growth on Different Copper Surfaces

Abstract

Cupric oxide (CuO) nanowires were produced by thermal oxidation of copper surfaces at temperatures up to 450 °C. Three different surfaces, namely a copper foil as well as evaporation deposited copper and an application relevant sputtered copper film on Si(100) substrates were characterized ex-situ before and after the experiment. The development of oxide layers and nanowires were monitored in-situ using grazing incidence small angle X-ray scattering. The number density of nanowires is highest for the sputtered surface and lowest for the surface prepared by evaporation deposition. This can be linked to different oxide grain sizes and copper grain boundary diffusions on the different surfaces. Small grains of the copper substrate and high surface roughness thereby lead to promoted growth of the nanowires.