First Demonstration of Dynamic Characteristics for SiC Superjunction MOSFET Realized using Multi-epitaxial Growth Method

Abstract

A 1.2 kV-class superjunction (SJ) UMOSFET was realized using a multi-epitaxial growth method. The dynamic characteristics were characterized, and the potential of a product level device was identified for the first time. The switching characteristics with Schottky barrier diode showed no degradation in spite of the large drain-source capacitance (C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> ). The reverse recovery characteristics of the body diode exhibited a soft recovery which may originate from the large C <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> and the short lifetime of minority carrier. A high short circuit capability comparable to a non-SJ device was demonstrated.