Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS) - Concepedia

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Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)

DOI Full Paper Access

14

Citations

17

References

2019

Year

Guilei Wang, Mohammadreza Kolahdouz, Jun Luo, Changliang Qin, Shihai Gu, Zhenzhen Kong, Xiaogen Yin, Wenjuan Xiong, Xuewei Zhao, Jinbiao Liu,

Journal of Materials Science Materials in Electronics

Electrical EngineeringSige LayersEngineeringPhysicsNanoelectronicsApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSemiconductor DeviceDrain Regions

References

	Year	Citations

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