IEEE Transactions on Electron Devices · 2019 · 53 citations · 25 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityDevice SimulationSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsAvalanche BreakdownElectron Impact IonizationEnergy TransferGallium Nitride (Gan) MaterialsHeavy Ion RadiationHeavy-ion ReactionsIonizationLinear Energy Transfer Effects
This brief first time presents single-event burnout (SEB) simulation results for conventional AlGaN/ GaN gate field plate MISFET (GFP-C MISFET), simultaneously, a hardened MISFET with electrode connected doped plugs in the buffer (EC-DP MISFET) is proposed for the first time. The SEB triggering mechanisms contain the backchannel effect and following impact ionization dominated by electron in the high field region. By comparing the simulation results from the GFP-C MISFET and proposed hardened EC-DP MISFET, the carriers induced by heavy ion can be quickly absorbed to drain and source electrode through EC-DP, so that the proposed EC-DP MISFET can achieve better SEB performance than conventional one. With a heavy ion having the linear energy transfer value of 0.6pC/μm striking vertically, SEB threshold voltage obtained in GFP-C MISFET and hardened EC-DP MISFET is 280 and 338 V, respectively.
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