Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device

Fabrication of Single‐ and Multilayer MoS₂ Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Hai Li, Zongyou Yin, Qiyuan He et al. · Small · 2011 · 1.5K citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

MoS₂ Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

Sung‐Wook Min, Youn-Gyung Chang, Min Kyu Park et al. · Nano Letters · 2012 · 1.3K citations

Engineering, Materials Engineering, Materials Science +17

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

Vinod K. Sangwan, Deep Jariwala, In S. Kim et al. · Nature Nanotechnology · 2015 · 703 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +16

Layered memristive and memcapacitive switches for printable electronics

Alexander Bessonov, M. N. Kirikova, Dmitrii I. Petukhov et al. · Nature Materials · 2014 · 530 citations

Engineering, Electrical Engineering, Materials Science +11

Highly Ordered Mesoporous MoS₂ with Expanded Spacing of the (002) Crystal Plane for Ultrafast Lithium Ion Storage

Hao Liu, Dawei Su, Ruifeng Zhou et al. · Advanced Energy Materials · 2012 · 484 citations

Natural Sciences, Materials Engineering, Materials Science +17