Publication | Closed Access
The influence of grain boundary interface traps on electrical characteristics of top select gate transistor in 3D NAND flash memory
17
Citations
19
References
2018
Year
Electrical CharacteristicsNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsFlash MemoryComputer EngineeringSemiconductor MemoryMicroelectronicsNand Flash Memory
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