High-Performance ReS₂ FET for Optoelectronics and Flexible Electronics Applications

Abstract

In this letter, we introduce field-effect transistors (FETs) built with ReS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> on engineered flexible substrate. Excellent electrical behaviors have been obtained including high mobility, low subthreshold swing, and large on/off ratio. The optoelectronics and flexible electronics applications of the ReS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FETs have been studied. The FET-based photodetector exhibited photoresponsivity up to 25.3 AW <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> . Great mechanical properties have also been achieved under various strain conditions. Such excellent performance is comparable to the well-developed Si-based devices and is due to the remarkable inherent material properties of ReS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and optimized device structure engineering on flexible substrate.