3D system integration on 300 mm wafer level: High-aspect-ratio TSVs with ruthenium seed layer by thermal ALD and subsequent copper electroplating

Sebastian Killge, Irene Bartusseck, Marcel Junige, Volker Neumann, Johanna Reif, Christian Wenzel, Mathias Böttcher, Matthias Albert, M. J. Wolf, Johann W. Bartha

Microelectronic Engineering · 2018 · 29 citations · 17 references

Concepts

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