Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching

Abstract

The dynamics of mobile oxygen vacancies depend on electric field and temperature, and this is key to controlling interfacial resistive switching in BiFeO${}_{3}$ memristive devices, which are interesting especially for neuromorphic computing. The authors use impedance spectroscopy and quasistatic state measurements to reveal the dynamics of resistance changes in such devices, and relate these changes to the redistribution of oxygen vacancies via modeling. This work will also impact the use of other oxides with mobile oxygen vacancies in similar devices.