The First Compact Model to Determine <inline-formula> <tex-math notation="LaTeX">$V_{T}$ </tex-math> </inline-formula> Distribution for DG-FinFET Due to LER

Abstract

We report the first compact model to estimate the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{T}$ </tex-math></inline-formula> distribution of double gate-FinFET due to line edge roughness. We derive closed-form expressions, representing the compact model, for: 1) mean and standard deviation of fin width ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\text {fin}}$ </tex-math></inline-formula> ) in terms of geometrical and variability parameters of the FinFET; 2) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{T}$ </tex-math></inline-formula> as a function of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${W}_{\mathrm {fin}}$ </tex-math></inline-formula> for uniform width fins; and 3) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{T}$ </tex-math></inline-formula> in tapered fins using percolation. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{T}$ </tex-math></inline-formula> distribution produced from the compact model shows a good match with well-calibrated TCAD data and demonstrates an excellent accuracy (~3mV rms error) for a wide range of scaling and variability parameters. The model is simple, platform independent, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim {\text {10}}^{\text {4}}{\times }$ </tex-math></inline-formula> faster compared to TCAD. It enables intuitive understanding of design space for FinFET on the one hand, and accurate FinFET variability-aware circuits and system design on the other hand.