Electrical Characterization of Schottky Diodes Based on Inkjet-Printed TiO₂ Films

Abstract

TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> films have been used for novel sensor devices, thanks to their optical and chemical properties. The development of those applications often requires the features of rectifier devices. In this scenario, TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based Schottky diodes become an interesting alternative. In this letter, a detailed electrical characterization of TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based Schottky diodes is performed. Thin films of the three crystalline phases have been obtained by the inkjet printing technique at room temperature. Thermionic and Poole-Frenkel emission are identified as the main conduction mechanisms in these devices, and the barrier heights are reported for each crystal phase.