Semiconductor Science and Technology · 2018 · 23 citations · 23 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsPhotodetectorsQuantum DotsSemiconductor DetectorsSemiconductor Device MaterialsSemiconductor PhysicsDefect DensityDefect FormationQuantum Dot DevicesQuantum Dot PhotodetectorsSemiconductor Infrared MaterialsSiliconStrained-layer HeterostructuresX-ray Diffraction Analysis
An InGaAs quantum dot (QD) photodetector is directly grown on a silicon substrate. GaAs-on-Si virtual substrates with a defect density in the order of 106 cm−2 are fabricated by using strained-layer superlattice as dislocation filters. As a result of the high quality virtual substrate, fabrication of QD layer with good structural properties has been achieved, as evidenced by transmission electron microscopy and x-ray diffraction measurements. The InGaAs QD infrared photodetector is then fabricated on the GaAs-on-Si wafer substrate. Dual-band photoresponse is observed at 80 K with two response peaks around 6 and 15 μm.
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Electrically pumped continuous-wave III–V quantum dot lasers on silicon
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