Transient Analysis for Electrothermal Properties in Nanoscale Transistors

Abstract

Due to the significance of electron and heat transfer in designing the nanoscale semiconductor devices, the transient analysis of electrothermal properties has attracted extensive attention. In this paper, the density-gradient and dual-phase-lag (DPL) equations are first combined to predict the electron and heat transport in nanoscale transistors. The DPL equation is solved with the consideration of the temperature jump boundary condition that dealing with phonon-wall collisions. We have shown that the temporal and spatial distributions of related physical variables can be obtained by self-consistently solving these equations. Furthermore, the spectral element time-domain method is used to discretize these equations. Numerical results of electrothermal properties for both 2-D and 3-D field-effect transistors have been demonstrated to show the robustness and universality of the proposed model. Therefore, the model we proposed can be used with the temporal and spatial distributions, which could be helpful for evaluating the electrothermal performance and computational designing of nanoscale transistors.