A 26 GHz Doherty power amplifier and a fully integrated 2×2 PA in 0.15μm GaN HEMT process for heterogeneous integration and 5G

Abstract

A 26 GHz Doherty power amplifier MMIC and a fully integrated 2×2 PA array based on the DPA are presented in this paper. The Doherty power amplifier using 0.15μm GaN HEMT technology, achieves maximum small signal gain of 13.6 dB and saturated output power of over 32 dBm in 24-28 GHz, with peak PAE of 21.7%, and 6 dB back-off PAE of 20% at 26 GHz. The 2×2 power MMIC consists of 4 symmetric proposed Doherty PAs with signal interconnections on the backside and specialized optimizations of layouts for 3D heterogeneous integration technology, which is suitable for 5G Massive MIMO applications. The chip size of single Doherty power amplifier and monolithic power amplifier array are 2.5 × 2.0 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 5.0 × 5.0 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> respectively.