Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

Abstract

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-<italic>b</italic>]fluorene and dihydroindeno[2,1-<italic>b</italic>]fluorene derivatives have been studied.