Journal of Physics Conference Series · 2018 · 17 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsOptoelectronic DevicesOptoelectronic MaterialsPhotoelectron SpectroscopySemiconductor Device MaterialsSemiconductor HeterostructuresHeterostructure DevicesHeterostructure MaterialsHeterostructure OptoelectronicsIndium Gallium PhosphideIndium PhosphideNear-infrared RadiationPhotocathodesSpectral Characteristics
Results of indium phosphide structures research, showing the possibility of using in the near infrared range photocathodes of InP/InGaAs, are represented. An optimal method of obtaining the atomically clean indium phosphide surface was suggested. The spectral characteristics of InP/InGaAs heterostructure were given. The results of an experimental study of pin-diode, which was used as the receiver of photoelectrons, are presented.
4