RSC Advances · 2018 · 12 citations · 36 references
EngineeringMaterials EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsAtomic Layer DepositionPhotovoltaic MaterialsSemiconductor Device MaterialsSemiconductor SurfacesSolar CellsSurface PassivationFill FactorPassivationPassivation LayersPower Conversion EfficiencyReflectanceShort-circuit CurrentSurface Passivation LayersThin-film Solar Cells
ALD-Al<sub>2</sub>O<sub>3</sub> is used as a passivation layer in a CZTSSe device and optimal device parameters are obtained by precisely controlling Al<sub>2</sub>O<sub>3</sub> thickness.
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Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
Wei Wang, Mark T. Winkler, Oki Gunawan et al. · Advanced Energy Materials · 2013 · 3.2K citations
Effects of heavy alkali elements in Cu(In,Ga)Se<sub>2</sub>solar cells with efficiencies up to 22.6%
Philip Jackson, Roland Wüerz, Dimitrios Hariskos et al. · physica status solidi (RRL) - Rapid Research Letters · 2016 · 1.5K citations · Full text
Natural Sciences, Materials Engineering, Materials Science +15