Applied Physics Express · 2018 · 65 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor LasersSemiconductor PhysicsWide Band Gap SemiconductorsDifferential EfficiencyElectrical PropertiesEpitaxial InterfacesGallium Nitride (Gan) MaterialsMaximum Power OutputPower OutputThreshold VoltageVertical-cavity Surface-emitting Lasers
We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.
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S. O. Kucheyev, J. S. Williams, S. J. Pearton · Materials Science and Engineering R Reports · 2001 · 413 citations
Diode lasers and photonic integrated circuits.
Corzine Coldren · 2014 · 404 citations