Light Stimulated IGZO-Based Electric-Double-Layer Transistors For Photoelectric Neuromorphic Devices

Abstract

Inspired by the neocortex of the human brain, neuromorphic systems are favorable for processing a variety of complex tasks, such as recognition, prediction, and optimization. To build such an intelligent system, neuromorphic devices are in high demand. Here, photoelectric neuromorphic devices based on pulse light-stimulated low-voltage indium-gallium-zinc-oxide electric-double-layer transistors were investigated. Such devices can mimic some important synaptic behaviors, such as excitatory post-synaptic potentials, paired-pulse facilitation, and long-term plasticity in the form of photonic excitatory post-synaptic potentials. At last, depression mode to potentiation mode transition was also demonstrated by gate voltage modulation. Our photoelectric neuromorphic devices are interesting for photonic neuromorphic systems.