Impact of Device Area and Film Thickness on Performance of Sol-Gel Processed ZrO₂RRAM

Abstract

A sol-gel-processed ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer was used as an active layer for a resistive random-access memory (RRAM). With top Ag electrodes, the fabricated devices show conventional bipolar switching memory properties. The impacts of device size and ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film thickness on device performance were investigated. The scaling of the device area and the successful increase in ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film thickness increased the high-resistance state (HRS)/low-resistance state (LRS) ratio values and improved the non-volatile memory properties, such as retention and endurance. The fabricated ITO/ZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ag RRAM shows good retention and endurance properties. The HRS and LRS were found to last for 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s without any significant degradation.