Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures - Concepedia

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Detailed characterisation of Si Gate-All-Around Nanowire MOSFETs at cryogenic temperatures

22

Citations

12

References

2018

Year

D. Boudier, B. Cretu, Eddy Simoen, A. Veloso, Nadine Collaert

Solid-State Electronics

Electrical EngineeringDetailed CharacterisationEngineeringNanotechnologyNanoelectronicsBias Temperature InstabilityApplied PhysicsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSemiconductor Device

References

	Year	Citations

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