Applied Physics Express · 2018 · 141 citations · 42 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor Thin FilmsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageEpitaxial Growth Of Wide-bandgap SemiconductorsEpitaxial MaterialsLeakageLow-pressure Chemical Vapor DepositionSchottky Barrier ContactsSchottky Barrier DiodesSchottky Barriers
We report (010)-oriented β-Ga2O3 bevel-field-plated mesa Schottky barrier diodes grown by low-pressure chemical vapor deposition (LPCVD) using a solid Ga precursor and O2 and SiCl4 sources. Schottky diodes with good ideality and low reverse leakage were realized on the epitaxial material. Edge termination using beveled field plates yielded a breakdown voltage of −190 V, and maximum vertical electric fields of 4.2 MV/cm in the center and 5.9 MV/cm at the edge were estimated, with extrinsic RON of 3.9 mΩ·cm2 and extracted intrinsic RON of 0.023 mΩ·cm2. The reported results demonstrate the high quality of homoepitaxial LPCVD-grown β-Ga2O3 thin films for vertical power electronics applications, and show that this growth method is promising for future β-Ga2O3 technology.
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Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 719 citations
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
Keita Konishi, Ken Goto, Hisashi Murakami et al. · Applied Physics Letters · 2017 · 576 citations