An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

Abstract

We present the results of a primary study on an OTS chalcogenide material system (TeAsGeSi) that incorporates Se and an extra dopant. V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> are trade-off parameters that can be tuned by modification of OTS composition, thickness and process temperature. The resulting new selector material demonstrated excellent endurance (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> with 50ns-pulsed 400uA On-current) and robust OTS characteristics after 350°C/30 mins annealing. The thin film could withstand 500 °C annealing.