Applied Physics A · 2018 · 15 citations · 16 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsHigh-frequency Semiconductor DevicesMemory DevicesSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsData RetentionData Retention VoltageHigh-density Memory MaterialsLong-term Data RetentionMemory MaterialsNanoelectronic Memory DevicesNon-volatile Memory Design
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Disorder-induced localization in crystalline phase-change materials
Theo Siegrist, Peter Jost, H Völker et al. · Nature Materials · 2011 · 612 citations
One order of magnitude faster phase change at reduced power in Ti-Sb-Te
Min Zhu, Mengjiao Xia, Feng Rao et al. · Nature Communications · 2014 · 232 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Ga14Sb86 film for ultralong data retention phase-change memory
Yegang Lü, Sannian Song, Zhitang Song et al. · Journal of Applied Physics · 2011 · 75 citations
Natural Sciences, Materials Engineering, Materials Science +15
Direct hexagonal transition of amorphous (Ge2Sb2Te5)0.9Se0.1 thin films
E. M. Vinod, K. Ramesh, R. Ganesan et al. · Applied Physics Letters · 2014 · 66 citations