Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum

Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces

D. Leonard, Mohan Krishnamurthy, C.M. Reaves et al. · Applied Physics Letters · 1993 · 1.7K citations

Direct Formation, Engineering, Uniform Coherent Islands +22

Gain and the threshold of three-dimensional quantum-box lasers

Masahiro Asada, Yasuyuki Miyamoto, Y. Suematsu · IEEE Journal of Quantum Electronics · 1986 · 1.1K citations

Categoryquantum Electronics, Three-dimensional Quantum-box Lasers, Engineering +22

Critical layer thickness for self-assembled InAs islands on GaAs

D. Leonard, K. Pond, P. M. Petroff · Physical review. B, Condensed matter · 1994 · 958 citations

Materials Science, Atomic Force Microscopy, Critical Thickness +13

Low threshold, large <i> T _o </i> injectionlaser emissionfrom (InGa)As quantum dots

N. Kirstaedter, N. N. Ledentsov, Marius Grundmann et al. · Electronics Letters · 1994 · 805 citations

Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs

Glenn S. Solomon, J. A. Trezza, A. F. Marshall et al. · Physical Review Letters · 1996 · 700 citations

Materials Science, Ii-vi Semiconductor, Island Size +11