Design of a novel, high-density, high-speed 10 kV SiC MOSFET module

Abstract

High-density packaging of fast-switching power semiconductors typically requires low thermal resistance and parasitic inductance. High-density packaging of high-voltage semiconductors, such as 10 kV SiC MOSFETs, has the added challenge of maintaining low electric field concentration in order to prevent premature dielectric breakdown. This work proposes a wire-bond-less, sandwich structure with embedded decoupling capacitors and stacked ceramic substrates in order to realize a high-density module capable of high-speed switching with low electric field concentration and EMI. This is the first time that these advanced packaging techniques have been applied to a 10 kV SiC MOSFET module.