Journal of Physics D Applied Physics · 2017 · 23 citations · 35 references
Natural SciencesElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesOxide SemiconductorsPhotodetectorsPhotovoltaic MaterialsSemiconductor NanomaterialsSolar Cell MaterialsSolar CellsCharge MultiplicationElectron MultiplicationExternal Quantum EfficiencyHeterojunction PhotodetectorsPhotodetectionPhotodiodesResponsivitySputter Deposition
Abstract In this work, we report a high-performance p -ZnO/ n -Si heterojunction-based ultraviolet (UV) photodetector fabricated by dual ion beam sputter deposition. The lithium–phosphorus (Li–P) codoping route was used to realize low resistive and stable p -type ZnO. The current–voltage characteristics of p -ZnO/ n -Si heterojunction photodiode showed good rectifying behavior with a rectification ratio of 170 at ±3 V. The spectral response measurements of the photodiode showed excellent responsivity with a peak observed around ~325 nm and cutoff wavelength around 370 nm. The maximum responsivity achieved was 2.6 A W −1 at an applied reverse bias of −6 V. The external quantum efficiency determined was of the order of ~1000% which is attributed to the trap assisted multiplication of charge carriers.
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ZnO Nanowire UV Photodetectors with High Internal Gain
Cesare Soci, A. Zhang, Bin Xiang et al. · Nano Letters · 2007 · 2.6K citations