Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation - Concepedia

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Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation

22

Citations

28

References

2017

Year

Jin Huang, Markus Loeffler, Uwe Muehle, W. Moeller, J.J.L. Mulders, L.F.Tz. Kwakman, Willem F. van Dorp, Ehrenfried Zschech

Ultramicroscopy

Materials EngineeringIon ImplantationEngineeringCrystalline DefectsApplied PhysicsSi AmorphizationDynamic Bca SimulationDefect FormationSemiconductor Device FabricationAmorphous SolidDefect TolerancePoint Defect ModelMicrostructureMicroelectronics

References

	Year	Citations

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