Publication | Closed Access
Evolution of resistive switching mechanism through H 2 O 2 sensing by using TaO x -based material in W/Al 2 O 3 /TaO x /TiN structure
33
Citations
50
References
2017
Year
Materials ScienceIi-vi SemiconductorTransition Metal ChalcogenidesEngineeringNanoelectronicsOxide ElectronicsSurface ScienceApplied PhysicsTao XResistive Switching MechanismSemiconductor MaterialTopological HeterostructuresO 2
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