Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2 - Concepedia

Concepedia

Publication | Closed Access

Ion/Ioff ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO2

42

Citations

28

References

2017

Year

Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto

Solid-State Electronics

Electrical EngineeringEngineeringFerroelectric Hfo2Ferroelectric ApplicationNanotechnologyNanoelectronicsElectronic EngineeringApplied PhysicsIon/ioff Ratio EnhancementMicroelectronicsSemiconductor Device

References

	Year	Citations

Page 1