Journal of Physics D Applied Physics · 2017 · 287 citations · 79 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsPower ElectronicsSemiconductor DevicesOxide SemiconductorsSemiconductor Crystal GrowthSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsEpitaxial Thin FilmsGallium OxidePower Electronics DevicesState-of-the-art ReviewSwitching DevicesTransistors For Power ConversionWide Bandgap Semiconductor Applications
Gallium oxide has attracted attention for power devices because of its superior material properties and the availability of inexpensive, device‑quality native substrates. This review examines recent advances in GaO device technologies, starting with an overview of the social drivers behind the development of next‑generation switching devices. The authors discuss growth methods for bulk GaO single crystals and epitaxial thin films, and describe the fabrication and performance of state‑of‑the‑art GaO transistors and diodes. They conclude by outlining future directions and challenges for GaO power device development.
Gallium oxide (GaO) has gained increased attention for power devices due to its superior material properties and the availability of economical device-quality native substrates. This review illustrates recent advances in GaO device technologies, beginning with an overview of the social circumstances that motivate the development of new-generation switching devices. Following an introduction to the material properties of GaO from the viewpoint of power electronics, growth technologies of GaO bulk single crystals and epitaxial thin films are discussed. The fabrication and performance of state-of-the-art GaO transistors and diodes are then described. We conclude by identifying the directions and challenges of GaO power device development in the near future.
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