A 65-nm CMOS Wideband TDD Front-End With Integrated T/R Switching via PA Re-Use

Xiao Xiao, Amanda Pratt, Bonjern Yang, Angie Wang, Ali M. Niknejad, Elad Alon, Borivoje Nikolić

IEEE Journal of Solid-State Circuits · 2017 · 20 citations · 21 references

Concepts

Abstract

Time-division duplex (TDD) systems rely on off-chip transmit/receive (T/R) switches to isolate the RX from the high-output power of the TX, while existing on-chip T/R switching solutions are narrow-band or high loss. This paper presents a wideband integrated T/R switching technique that eliminates the conventional, lossy series T/R switch from the signal path. The system reconfigures the PA as an LNA during the receive mode, and utilizes only DC mode control switches to enable TDD co-existence. To demonstrate this technique, a polar transmitter that can be re-purposed into a common-gate LNA is implemented in 65-nm CMOS. With an integrated front-end balun transformer, the transmitter achieves 20-dBm peak output power with 32.7% peak drain efficiency. In the receive mode, the PA is reconfigured into a wideband 3.4-5.4-GHz LNA achieving -6.7-dBm P1dB, and 5.1-dB noise figure.

References

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