Journal of Materials Chemistry C · 2017 · 17 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesThin FilmsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsThin Film AnnealingThin Film Electrical PropertiesThin-film MaterialsThin-film TransistorsElectrical PropertiesOxide Thin-film TransistorsSemiconductor Oxide Thin FilmsSolution-processed Thin-film TransistorsThin Oxide Films
Solution-processed and oxygen-annealed Zn–Sn–O TFTs were developed using tin(<sc>ii</sc>) 2-ethylhexanoate as the precursor, exhibiting excellent electrical performance.
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