Publication | Closed Access
Ag filament induced nonvolatile resistive switching memory behaviour in hexagonal MoSe2 nanosheets
36
Citations
24
References
2017
Year
Materials ScienceNon-volatile MemoryHexagonal Mose2 NanosheetsEngineeringNanomaterialsNanotechnologyNanoelectronicsApplied PhysicsSemiconductor MemoryAg FilamentPhase Change MemoryMemory Behaviour
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