Applied Physics Express · 2017 · 20 citations · 26 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsInterface ScienceNanomaterialsCarbon NanomaterialsCrystal DirectionsEpitaxial GrowthGraphene NanomaterialsSurface CrystallographySurface PhysicsCrystal Plane OrientationEpitaxial InterfacesEpitaxial MaterialsGrapheneHexagonal Boron NitrideHigh-resolution Electron MicroscopyHigh-resolution Transmission Electron MicroscopyUniform Interface
The crystal orientation of epitaxially grown hexagonal boron nitride (hBN) monolayers from graphene edges was investigated. Low-energy electron microscopy observations reveal that the orientation of individual hBN grains is dependent on the direction of the templated zigzag edges of graphene. Furthermore, the triangular atomic defects in hBN were used to confirm the orientation of epitaxial hBN through high-resolution transmission electron microscopy observations. The results indicate that the orientation of epitaxially grown hBN is determined by the formation of carbon–boron bonds at the graphene/hBN interface, which provides a promising way of producing uniform interface structures and orientation-controlled hBN grains.
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Atomic layers of hybridized boron nitride and graphene domains
Lijie Ci, Li Song, Chuanhong Jin et al. · Nature Materials · 2010 · 2.2K citations
Graphene and boron nitride lateral heterostructures for atomically thin circuitry
Mark Levendorf, Cheol‐Joo Kim, Lola Brown et al. · Nature · 2012 · 853 citations
Natural Sciences, Materials Engineering, Materials Science +14