Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications

Abstract

In the last decade, there has been considerable development in the area of oxide semiconductors, owing to their superior electrical properties as compared to a‐Si:H, and lower cost and better uniformity over large areas as compared to poly‐Si. On the other hand, multi‐functional sensing systems play a significant role in building a bridge across bio/electronic interface and require advanced thin‐film transistors (TFT) as sensing components and signal processing circuits. High‐performance oxide TFTs are constructed based on material design, advanced processing and device architecture and provide higher sensitivity when compared with other active thin‐film transistor platforms. Their versatile configurations and integration with functional materials make oxide TFT the focal point of sensing systems, including wearable and implantable electronics.