Scientific Reports · 2017 · 19 citations · 18 references
Natural SciencesMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsLight SourcesLight-emitting DiodesLuminescent MaterialsOptoelectronic DevicesOptoelectronic MaterialsRare-earth-doped MaterialsElectroluminescenceLanthanide-doped MaterialsLight-emitting DevicesLight-emitting MaterialsNear-infrared EmissionRare-earth-doped Luminescent MaterialsSemiconductor Light-emitting Materials
Abstract Great efforts have been devoted to achieving efficient Si-based light-emitting devices. Here we report new light-emitting devices fabricated with Tb 2 O 3 on Si substrates. Intense green electroluminescence was observed, with a turn-on voltage of about 8 V. The green emission is attributed to the characteristic transitions of Tb 3+ ions in Tb 2 O 3 . The electroluminescence mechanisms of the Tb 2 O 3 light-emitting devices are discussed. In addition, visible and near infrared electroluminescence was observed in rare-earth (Eu 3+ , Sm 3+ and Yb 3+ ) doped Tb 2 O 3 light-emitting devices.
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High-Efficiency Silicon Nanocrystal Light-Emitting Devices
Kai‐Yuan Cheng, Rebecca Anthony, Uwe Kortshagen et al. · Nano Letters · 2011 · 361 citations